A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration

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DC 欄位	值	語言
dc.contributor.author	Huang, Shi-Zhe	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.date.accessioned	2014-12-08T15:25:30Z	-
dc.date.available	2014-12-08T15:25:30Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	978-957-28522-2-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17901	-
dc.description.abstract	A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behaviour of the source follower with a LTPS TFT. A new interpretation of the threshold voltage of LTPS TFT is also provided.	en_US
dc.language.iso	en_US	en_US
dc.title	A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005	en_US
dc.citation.spage	442	en_US
dc.citation.epage	444	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000259399200118	-
顯示於類別：	會議論文