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dc.contributor.authorLin, CKen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorLin, CJen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorChen, CYen_US
dc.date.accessioned2014-12-08T15:25:34Z-
dc.date.available2014-12-08T15:25:34Z-
dc.date.issued2005en_US
dc.identifier.isbn0-8194-5708-6en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17963-
dc.identifier.urihttp://dx.doi.org/10.1117/12.587978en_US
dc.description.abstractSilicon defect and nanocrystal related white and red electroluminescences (EL) of Si-rich SiO2 based on metal-oxide-semiconductor (MOS) diode using transparent electrode contact are reported. The 500nm-thick Si-rich SiO2 film on n-type Si substrate is synthesized using multi-recipe Si-ion-implantation or plasma enhanced chemical vapor deposition (PECVD). After 1100 degrees C annealing for 3 hrs, the PL of Si-ion-implanted sample at 415 rim and 455 rim contributed by the weak-oxygen bond and neutral oxygen vacancy defects is observed. The white-light EL spectrum was observed at reverse bias, which originates from the tunneling and recombination intermediate state of SiO2:Si+ at a threshold current and voltage of 1.56 mA and 9.6 V, respectively. The maximum EL power of 110 nW is obtained at biased voltage of 25 V. The linear relationship between the optical power and injection current with a corresponding slope of 2.16 mu W/A is obtained. The 4-mn nanocrystallite silicon (nc-Si) is precipitated in the 240nm-thick PECVD grown silicon-rich SiO2 film annealed at 1100 degrees C for 30 min with Indium-tin-oxide (ITO) of 0.8 min in diameter, which contributes PL at 760 rim. The peak wavelength of the EL spectra coincides well with the PL. The threshold cur-rent and voltage are 86 V and 1.08 mu A, respectively. The power-current (P-I) slope is determined as 697 mu W/A. The carrier injection mechanism is dominated by Fowler-Nordheim(F-N) tunneling.en_US
dc.language.isoen_USen_US
dc.subjectSi-rich SiO2en_US
dc.subjectelectroluminescenceen_US
dc.subjectnanocrystallite siliconen_US
dc.subjectdefectsen_US
dc.subjectmetal-oxide-semiconductor diodeen_US
dc.titleSilicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diodeen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.587978en_US
dc.identifier.journalQuantum Dots, Nanoparticles, and Nonoclusters IIen_US
dc.citation.volume5734en_US
dc.citation.spage45en_US
dc.citation.epage52en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000229697800006-
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