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dc.contributor.authorChen, Chia-Peien_US
dc.contributor.authorLi, Simon C.en_US
dc.contributor.authorKao, Hong-Singen_US
dc.contributor.authorSu, Chung-Chihen_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2014-12-08T15:25:36Z-
dc.date.available2014-12-08T15:25:36Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9162-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/17994-
dc.identifier.urihttp://dx.doi.org/10.1109/ASSCC.2005.251734en_US
dc.description.abstractA single-chip tunable CMOS low-IF single-conversion receiver operated in the 915-MHz ISM band is proposed. A new 10.7-MHz IF section including a limiting amplifier and FM/FSK demodulator is employed. Near IF section sensitivity of -72 dBm, the demodulation constant of FM/FSK demodulator is 15 mV/kHz and the dynamic range of the limiting amplifier reaches 80dB. With on-chip tunable components in low power LNA and LC-tank VCO circuit, the receiver measures a RF gain of 15dB at 915-MHz, sensitivity of -80dBm at 0.1% BER, IIP3 of -9dBm, and NF of 5dB with current consumption of 33mA and a chip area of 6 mm(2).en_US
dc.language.isoen_USen_US
dc.titleA single-chip low-power tunable CMOS low-IF single-conversion ISM receiveren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ASSCC.2005.251734en_US
dc.identifier.journal2005 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage337en_US
dc.citation.epage340en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240872200085-
Appears in Collections:Conferences Paper


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