Optically pumped GaN-based vertical cavity surface emitting laser at room temperature

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chu, JT	en_US
dc.contributor.author	Liang, WD	en_US
dc.contributor.author	Kao, CC	en_US
dc.contributor.author	Huang, HW	en_US
dc.contributor.author	Lu, TC	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:25:39Z	-
dc.date.available	2014-12-08T15:25:39Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9242-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18063	-
dc.description.abstract	The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions.	en_US
dc.language.iso	en_US	en_US
dc.title	Optically pumped GaN-based vertical cavity surface emitting laser at room temperature	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 Pacific Rim Conference on Lasers and Electro-Optics	en_US
dc.citation.spage	166	en_US
dc.citation.epage	167	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000236757900081	-
顯示於類別：	會議論文