Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O

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DC Field	Value	Language
dc.contributor.author	Lai, FI	en_US
dc.contributor.author	Chen, WY	en_US
dc.contributor.author	Kao, CC	en_US
dc.contributor.author	Lin, CF	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:25:39Z	-
dc.date.available	2014-12-08T15:25:39Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9242-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18065	-
dc.description.abstract	An enhancement of GaN-based LEDs light output using photoelectrochemical (PEC) oxidation method via H2O on the p-GaN surface was demonstrated. The output light was improved 37% after 45min PEC oxidation.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 Pacific Rim Conference on Lasers and Electro-Optics	en_US
dc.citation.spage	202	en_US
dc.citation.epage	203	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000236757900098	-
Appears in Collections:	Conferences Paper