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dc.contributor.authorLee, YJen_US
dc.contributor.authorHsu, TCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorYang, YLen_US
dc.contributor.authorYen, SNen_US
dc.contributor.authorChu, YTen_US
dc.contributor.authorShen, YJen_US
dc.contributor.authorHsieh, MHen_US
dc.contributor.authorJou, MJen_US
dc.contributor.authorLee, BJen_US
dc.date.accessioned2014-12-08T15:25:39Z-
dc.date.available2014-12-08T15:25:39Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9242-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/18072-
dc.description.abstractThe output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20% higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.en_US
dc.language.isoen_USen_US
dc.subjectpatterned sapphire substrate (PSS)en_US
dc.subjectnear ultravioleten_US
dc.subjectLEDsen_US
dc.titleImprovement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 Pacific Rim Conference on Lasers and Electro-Opticsen_US
dc.citation.spage508en_US
dc.citation.epage509en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000236757900243-
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