Near-infrared femtosecond laser activation of shallow B and P doped layers

Full metadata record

DC Field	Value	Language
dc.contributor.author	Wang, YC	en_US
dc.contributor.author	Zaitsev, A	en_US
dc.contributor.author	Pan, CL	en_US
dc.date.accessioned	2014-12-08T15:25:39Z	-
dc.date.available	2014-12-08T15:25:39Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9242-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18079	-
dc.description.abstract	Femtosecond Ti:sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.	en_US
dc.language.iso	en_US	en_US
dc.subject	laser activation	en_US
dc.subject	shallow junction	en_US
dc.subject	Boron	en_US
dc.subject	Phosphorous	en_US
dc.title	Near-infrared femtosecond laser activation of shallow B and P doped layers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 Pacific Rim Conference on Lasers and Electro-Optics	en_US
dc.citation.spage	789	en_US
dc.citation.epage	790	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000236757900377	-
Appears in Collections:	Conferences Paper