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dc.contributor.authorWang, CSen_US
dc.contributor.authorChen, MJen_US
dc.contributor.authorChang, WCen_US
dc.contributor.authorKe, WSen_US
dc.contributor.authorLee, CFen_US
dc.contributor.authorSu, KCen_US
dc.contributor.authorChou, ENen_US
dc.date.accessioned2014-12-08T15:25:43Z-
dc.date.available2014-12-08T15:25:43Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8454-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18133-
dc.description.abstractElectromigration lifetime extrapolated from the wafer level isothermal test on a metal line does not coincide with that from the package level constant current test. The discontinuity of mass flux density in wafer level isothermal test as origin of such difference is identified based on a temperature profile along the metal line. Once this issue is clarified in advance, improved correlation between both tests can be achieved and as a result, wafer level isothermal test is expected to replace the conventional time-consuming package level constant current test.en_US
dc.language.isoen_USen_US
dc.titlePlausible origin of electromigration lifetime extrapolation difference between wafer level isothermal test and package level constant current testen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITSen_US
dc.citation.spage169en_US
dc.citation.epage172en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224428800041-
Appears in Collections:Conferences Paper