完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, CS | en_US |
dc.contributor.author | Chen, MJ | en_US |
dc.contributor.author | Chang, WC | en_US |
dc.contributor.author | Ke, WS | en_US |
dc.contributor.author | Lee, CF | en_US |
dc.contributor.author | Su, KC | en_US |
dc.contributor.author | Chou, EN | en_US |
dc.date.accessioned | 2014-12-08T15:25:43Z | - |
dc.date.available | 2014-12-08T15:25:43Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.isbn | 0-7803-8454-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18133 | - |
dc.description.abstract | Electromigration lifetime extrapolated from the wafer level isothermal test on a metal line does not coincide with that from the package level constant current test. The discontinuity of mass flux density in wafer level isothermal test as origin of such difference is identified based on a temperature profile along the metal line. Once this issue is clarified in advance, improved correlation between both tests can be achieved and as a result, wafer level isothermal test is expected to replace the conventional time-consuming package level constant current test. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Plausible origin of electromigration lifetime extrapolation difference between wafer level isothermal test and package level constant current test | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | en_US |
dc.citation.spage | 169 | en_US |
dc.citation.epage | 172 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000224428800041 | - |
顯示於類別: | 會議論文 |