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dc.contributor.authorWu, WCen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorChang, Len_US
dc.date.accessioned2014-12-08T15:25:43Z-
dc.date.available2014-12-08T15:25:43Z-
dc.date.issued2004en_US
dc.identifier.isbn1-55899-721-0en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/18137-
dc.description.abstractCopper metallization for GaAs was evaluated by using Cu/Ta/GaAs multilayers for its thermal stability. A thin Ta layer of 30 nm thickness was sputtered on the GaAs substrate as the diffusion barrier before copper film metallization. As judged from the results of sheet resistance, X-ray diffraction, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films on GaAs were very stable up to 500 degreesC without Cu migration into GaAs. After 550 degreesC annealing, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaGa2 and TaAs2, and the diffusion of Ga and As through the Ta layer formed the Cu3Ga and Cu3As phases at the Cu/Ta interface. After 600 degreesC annealing, the reaction of GaAs with Ta and Cu formed TaAs and Cu3Ga, as a result of Cu migration and interfacial instability.en_US
dc.language.isoen_USen_US
dc.titleMicrostructural evolution of Cu/Ta/GaAs multilayers with thermal annealingen_US
dc.typeProceedings Paperen_US
dc.identifier.journalMATERIALS, INTEGRATION AND PACKAGING ISSUES FOR HIGH-FREQUENCY DEVICESen_US
dc.citation.volume783en_US
dc.citation.spage211en_US
dc.citation.epage216en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000221648200030-
Appears in Collections:Conferences Paper