INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TAI, YH	en_US
dc.contributor.author	TSAI, JW	en_US
dc.contributor.author	CHENG, HC	en_US
dc.contributor.author	SU, FC	en_US
dc.date.accessioned	2014-12-08T15:03:15Z	-
dc.date.available	2014-12-08T15:03:15Z	-
dc.date.issued	1995-07-03	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.115512	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1813	-
dc.language.iso	en_US	en_US
dc.title	INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.115512	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	67	en_US
dc.citation.issue	1	en_US
dc.citation.spage	76	en_US
dc.citation.epage	78	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995RF82900026	-
dc.citation.woscount	27	-
顯示於類別：	期刊論文