Performance of AlGaN/GaN heterostrucrure FETs over temperatures

Abstract

In this article, a comparison on the device performance of the undoped and modulation-doped AlGaN/GaN HFETs over temperatures was presented. The results obtained indicated that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however. is not as good as the undoped devices.