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dc.contributor.authorLee, CCen_US
dc.contributor.authorShih, CFen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorTu, RCen_US
dc.contributor.authorChuo, CCen_US
dc.contributor.authorChi, Jen_US
dc.date.accessioned2014-12-08T15:25:46Z-
dc.date.available2014-12-08T15:25:46Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8511-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18189-
dc.description.abstractIn this article, a comparison on the device performance of the undoped and modulation-doped AlGaN/GaN HFETs over temperatures was presented. The results obtained indicated that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however. is not as good as the undoped devices.en_US
dc.language.isoen_USen_US
dc.titlePerformance of AlGaN/GaN heterostrucrure FETs over temperaturesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGSen_US
dc.citation.spage2265en_US
dc.citation.epage2268en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000227342202163-
Appears in Collections:Conferences Paper


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