Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

Abstract

The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find prograrnmed charge spreads further into the channel with program/erase cycle number.