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dc.contributor.authorLee, YJen_US
dc.contributor.authorTang, LCen_US
dc.contributor.authorWu, MHen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorHo, PTen_US
dc.contributor.authorLai, Den_US
dc.contributor.authorYang, WLen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:25:47Z-
dc.date.available2014-12-08T15:25:47Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8315-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18213-
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.2004.1315449en_US
dc.description.abstractNBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I-CP were measured simultaneously. Reduction of DeltaV(TH) and I-CP after positive gate bias stressing is related with the recovery of interface states.en_US
dc.language.isoen_USen_US
dc.titleNBTI effects of pMOSFETs with different nitrogen dose imlantationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.2004.1315449en_US
dc.identifier.journal2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGSen_US
dc.citation.spage681en_US
dc.citation.epage682en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222139900158-
Appears in Collections:Conferences Paper


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