NBTI effects of pMOSFETs with different nitrogen dose imlantation

doi:10.1109/RELPHY.2004.1315449

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, YJ	en_US
dc.contributor.author	Tang, LC	en_US
dc.contributor.author	Wu, MH	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Ho, PT	en_US
dc.contributor.author	Lai, D	en_US
dc.contributor.author	Yang, WL	en_US
dc.contributor.author	Huang, TY	en_US
dc.date.accessioned	2014-12-08T15:25:47Z	-
dc.date.available	2014-12-08T15:25:47Z	-
dc.date.issued	2004	en_US
dc.identifier.isbn	0-7803-8315-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18213	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2004.1315449	en_US
dc.description.abstract	NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I-CP were measured simultaneously. Reduction of DeltaV(TH) and I-CP after positive gate bias stressing is related with the recovery of interface states.	en_US
dc.language.iso	en_US	en_US
dc.title	NBTI effects of pMOSFETs with different nitrogen dose imlantation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RELPHY.2004.1315449	en_US
dc.identifier.journal	2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	en_US
dc.citation.spage	681	en_US
dc.citation.epage	682	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000222139900158	-
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