| 標題: | Large emitting area GaN based light emitting diode fabricated on conducting copper substrates |
| 作者: | Chu, JT Liang, WD Chu, CF Kuo, HC Wang, SC 光電工程學系 Department of Photonics |
| 公開日期: | 2004 |
| URI: | http://hdl.handle.net/11536/18217 |
| ISBN: | 0-7803-8557-8 |
| ISSN: | 1092-8081 |
| 期刊: | 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 |
| 起始頁: | 282 |
| 結束頁: | 283 |
| 顯示於類別： | 會議論文 |
- Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off / Chu, JT;Kuo, HC;Kao, CC;Huang, HW;Chu, CF
- 藉由晶圓接合和雷射剝離技術的搭配將氮化鎵薄膜整合在銅或矽基板上 / 盧昶鳴;Chang Ming Lu;吳耀銓;Yewchung Sermon Wu
- Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate / Peng, WC;Wu, YS
- Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off / Chu, JT;Liang, WD;Kao, CC;Huang, HW;Chu, CF
Loading...