Title: Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate length
Authors: King, MC
Lai, ZM
Huang, CH
Lee, CF
Ma, MW
Huang, CM
Chang, Y
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2004
Abstract: We have modeled the as-measured and de-embedded NFmin on multi-fingers 0.13 mum node MOSFETs. In contrast to the as-measured large NFmin value and strong dependence on parallel gate fingers, the de-embedded NFmin. has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of R(g)g(m) and drain hot carrier noise but both have weak dependence on finger numbers.
URI: http://hdl.handle.net/11536/18222
http://dx.doi.org/10.1109/RFIC.2004.1320561
ISBN: 0-7803-8333-8
ISSN: 1529-2517
DOI: 10.1109/RFIC.2004.1320561
Journal: 2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
Begin Page: 171
End Page: 174
Appears in Collections:Conferences Paper


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