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dc.contributor.authorKer, MDen_US
dc.contributor.authorDeng, CKen_US
dc.contributor.authorYang, SCen_US
dc.contributor.authorTasi, YMen_US
dc.date.accessioned2014-12-08T15:25:49Z-
dc.date.available2014-12-08T15:25:49Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8262-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18263-
dc.description.abstractDifferent test structures used to investigate the electrostatic discharge (ESD) robustness of on-glass device in Low Temperature Poly-Si (LTPS) process are proposed in this paper. The transmission line pulse generator (TLPG) is used to monitor the I-V behaviors of on-glass devices in the high-current region, and to evaluate the robustness of those LTPS devices during ESD stress condition. Finally, a successful ESD protection design with P+-i-N+ diodes and a VDD-to-VSS ESD clamp circuit integrated on a LCD panel has been demonstrated with a machine-model (MM) ESD level of up to 275 V, whereas the traditional one only can sustain 100 V MM ESD stress.en_US
dc.language.isoen_USen_US
dc.titleTest structures to verify ESD robustness of on-glass devices in UPS technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURESen_US
dc.citation.spage13en_US
dc.citation.epage17en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000222087700003-
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