1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorHuang, SYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorHsu, TLen_US
dc.contributor.authorTseng, HCen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:25:51Z-
dc.date.available2014-12-08T15:25:51Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8454-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18276-
dc.description.abstractHot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress.en_US
dc.language.isoen_USen_US
dc.titleHot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITSen_US
dc.citation.spage193en_US
dc.citation.epage196en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224428800047-
Appears in Collections:Conferences Paper


Related Contents
Loading...