标题: | Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors |
作者: | Huang, SY Chen, KM Huang, GW Hsu, TL Tseng, HC Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2004 |
摘要: | Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress. |
URI: | http://hdl.handle.net/11536/18276 |
ISBN: | 0-7803-8454-7 |
期刊: | IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS |
起始页: | 193 |
结束页: | 196 |
显示于类别: | Conferences Paper |