标题: Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
作者: Huang, SY
Chen, KM
Huang, GW
Hsu, TL
Tseng, HC
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 2004
摘要: Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress.
URI: http://hdl.handle.net/11536/18276
ISBN: 0-7803-8454-7
期刊: IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始页: 193
结束页: 196
显示于类别:Conferences Paper