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dc.contributor.authorChang, WJen_US
dc.contributor.authorKer, MDen_US
dc.date.accessioned2014-12-08T15:25:51Z-
dc.date.available2014-12-08T15:25:51Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8454-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18278-
dc.description.abstractLayout optimization on low-voltage-triggered PNP (LVTPNP) devices for ESD protection in mixed-voltage I/O interfaces is proposed in this paper. The experimental results in both 0.35-mum and 0.25-mum CMOS processes have proven that the ESD levels of the LVTPNP drawn in the multi-finger layout style are higher than that drawn in the original layout style. Moreover, the LVTPNP device in multi-finger layout style has been implemented in a 0.25-mum salicided CMOS process to protect successfully the input stage of an ADSL IC with power-rail ESD clamp circuit.en_US
dc.language.isoen_USen_US
dc.titleLayout optimization on low-voltage-triggered PNP devices for ESD protection in mixed-voltage I/O interfacesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITSen_US
dc.citation.spage213en_US
dc.citation.epage216en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000224428800053-
Appears in Collections:Conferences Paper