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dc.contributor.authorTang, CSen_US
dc.contributor.authorYu, SMen_US
dc.contributor.authorChou, HMen_US
dc.contributor.authorLee, JWen_US
dc.contributor.authorLi, YMen_US
dc.date.accessioned2014-12-08T15:25:55Z-
dc.date.available2014-12-08T15:25:55Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8536-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18359-
dc.description.abstractIn this paper, electrical characteristics of sub-10 not nanowire FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs.en_US
dc.language.isoen_USen_US
dc.subjectnanodeviceen_US
dc.subjectsemiconductor devicesen_US
dc.subjectnanowireen_US
dc.subjectFinFETen_US
dc.subjectomega-shaped-gateen_US
dc.subjectsurrounding-gate quantum correction modelen_US
dc.subjectdensity-gradienten_US
dc.subjectcoverage rationen_US
dc.subject3D simulationen_US
dc.subjectturn-on and turn-off characteristicsen_US
dc.subjectgate capacitanceen_US
dc.subjectturn-on resistanceen_US
dc.subjectmodeling and simulationen_US
dc.titleSimulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGYen_US
dc.citation.spage281en_US
dc.citation.epage283en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000226085100094-
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