COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS

doi:10.1116/1.588183

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TSANG, JS	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	FAN, JC	en_US
dc.contributor.author	TSAI, KL	en_US
dc.contributor.author	CHEN, HR	en_US
dc.date.accessioned	2014-12-08T15:03:17Z	-
dc.date.available	2014-12-08T15:03:17Z	-
dc.date.issued	1995-07-01	en_US
dc.identifier.issn	1071-1023	en_US
dc.identifier.uri	http://dx.doi.org/10.1116/1.588183	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1837	-
dc.description.abstract	The use of low-temperature (similar to 200 degrees C) grown GaAs by molecular beam epitaxy to induce compositional disordering of AlGaAs/GaAs superlattices has been studied. After furnace annealing between 700 and 850 degrees C for 30 min, an obvious blue shift in the peak wavelength of the superlattice emission is observed by the 77 K photoluminescence (PL), indicating that the emission has been changed from that of the GaAs quantum wells to that of the intermixed AlGaAs. The PL shift and the depth profile of Al concentration measured by secondary ion mass spectrometry indicate that the superlattice is nearly totally disordered after 850 degrees C annealing. (C) 1995 American Vacuum Society.	en_US
dc.language.iso	en_US	en_US
dc.title	COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1116/1.588183	en_US
dc.identifier.journal	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B	en_US
dc.citation.volume	13	en_US
dc.citation.issue	4	en_US
dc.citation.spage	1536	en_US
dc.citation.epage	1538	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RP99200022	-
dc.citation.woscount	0	-
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