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dc.contributor.authorCheng, MHen_US
dc.contributor.authorHuan-Shin, Len_US
dc.contributor.authorLin, SYen_US
dc.contributor.authorLiu, CHen_US
dc.contributor.authorLee, WYen_US
dc.contributor.authorTsai, CHen_US
dc.date.accessioned2014-12-08T15:26:00Z-
dc.date.available2014-12-08T15:26:00Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7673-0en_US
dc.identifier.issn1078-8743en_US
dc.identifier.urihttp://hdl.handle.net/11536/18432-
dc.description.abstractA fault detection and isolation system using model-based approach for the chamber pressure of plasma etching is developed. The dynamics of chamber pressure is modeled as a linear multiple-input-single-output closed-loop system and the model parameters are extracted by the system identification technique. The obtained parameters are then converted to physically meaningful features for detecting and isolating faults. The fuzzy inference and Dempster-Shafer evidence combining techniques are employed to detect and isolate fault from the features. The system has been evaluated by the measured data that are collected via SECS-II from the employed Lam-490 plasma etcher for processing practical products. The test results are satisfactory for a large amount of practical data and extensive computer simulations.en_US
dc.language.isoen_USen_US
dc.subjectfault detection and isolationen_US
dc.subjectplasma etchingen_US
dc.subjectsystem identificationen_US
dc.subjectfuzzy inferenceen_US
dc.subjectDempster-Shafer techniqueen_US
dc.titleFault detection and isolation for plasma etching using model-based approachen_US
dc.typeProceedings Paperen_US
dc.identifier.journalASCMC 2003: IEEE/SEMI (R) ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, PROCEEDINGSen_US
dc.citation.spage208en_US
dc.citation.epage214en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000182993100036-
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