Interference of esd protection diodes on RF performance in GIGA-HZ RF circuits

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DC 欄位	值	語言
dc.contributor.author	Ker, MD	en_US
dc.contributor.author	Lee, CM	en_US
dc.date.accessioned	2014-12-08T15:26:04Z	-
dc.date.available	2014-12-08T15:26:04Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7761-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18471	-
dc.description.abstract	The power gain and noise figure of two kinds of diode structures in a 0.25-mum CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (similar toGHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.	en_US
dc.language.iso	en_US	en_US
dc.title	Interference of esd protection diodes on RF performance in GIGA-HZ RF circuits	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING	en_US
dc.citation.spage	297	en_US
dc.citation.epage	300	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000184716700075	-
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