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dc.contributor.authorWen, SWen_US
dc.contributor.authorYen, CKen_US
dc.contributor.authorLiu, THen_US
dc.contributor.authorChen, CHen_US
dc.date.accessioned2014-12-08T15:26:05Z-
dc.date.available2014-12-08T15:26:05Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7887-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/18489-
dc.description.abstractDevelopment of RGB doped emitters based on the bipolar host of wide bandgap material, 9,10-bis(2-naphthyl)anthracene (ADN) is described. While the blue and green fluorescent dopants of TBP and C-545T achieved EL efficiencies of 5.1 and 11.2 cd/A, respectively in ADN, the red fluorescent DCJTB dopant needed to be doped in a co-hosted mixture of ADN. Alq(3) (60:40) in order to achieve a high efficiency of 4.8 cd/A with a near saturated CIEx,y = 0.64, 0.35 at 2% doping. Luminance efficiencies of all three RGB doped emitters in the bipolar ADN based host are not effected by increased drive current density, thus solving the current-induced fluorescence quenching problem often encountered in organic EL devices.en_US
dc.language.isoen_USen_US
dc.titleDoped RGB organic electroluminescent devices based on a bipolar host materialen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUMen_US
dc.citation.spage263en_US
dc.citation.epage265en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000189300100072-
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