| 標題: | THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs |
| 作者: | Liu, TA Tani, M Lin, GR Pan, CL 光電工程學系 Department of Photonics |
| 公開日期: | 2003 |
| 摘要: | We compare the performance of THz dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs (multi-GaAs:As+) and Semi-insulating (S. I.) GaAs. High damage threshold biasing (> 60 kV/cm) and large saturating optical pumping power (> 30 mW) for multi-GaAs:As+ based devices are reported. |
| URI: | http://hdl.handle.net/11536/18503 |
| ISBN: | 3-540-00089-5 |
| ISSN: | 0172-6218 |
| 期刊: | ULTRAFAST PHENOMENA XIII |
| Volume: | 71 |
| 起始頁: | 277 |
| 結束頁: | 279 |
| 顯示於類別： | 會議論文 |
- THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas / Liu, TA;Tani, M;Pan, CL
- Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs / Liu, TA;Tani, M;Nakajima, M;Hangyo, M;Pan, CL
- THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs / Liu, TA;Tani, M;Lin, GR;Pan, CL
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