THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs

Abstract

We compare the performance of THz dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs (multi-GaAs:As+) and Semi-insulating (S. I.) GaAs. High damage threshold biasing (> 60 kV/cm) and large saturating optical pumping power (> 30 mW) for multi-GaAs:As+ based devices are reported.