THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs

Full metadata record

DC Field	Value	Language
dc.contributor.author	Liu, TA	en_US
dc.contributor.author	Tani, M	en_US
dc.contributor.author	Lin, GR	en_US
dc.contributor.author	Pan, CL	en_US
dc.date.accessioned	2014-12-08T15:26:06Z	-
dc.date.available	2014-12-08T15:26:06Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	3-540-00089-5	en_US
dc.identifier.issn	0172-6218	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18503	-
dc.description.abstract	We compare the performance of THz dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs (multi-GaAs:As+) and Semi-insulating (S. I.) GaAs. High damage threshold biasing (> 60 kV/cm) and large saturating optical pumping power (> 30 mW) for multi-GaAs:As+ based devices are reported.	en_US
dc.language.iso	en_US	en_US
dc.title	THz emission characteristics of dipole antennas fabricated on multi-energy arsenic-ionimplanted GaAs and semi-insulating GaAs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	ULTRAFAST PHENOMENA XIII	en_US
dc.citation.volume	71	en_US
dc.citation.spage	277	en_US
dc.citation.epage	279	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000182432900086	-
Appears in Collections:	Conferences Paper