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dc.contributor.authorChen, WZen_US
dc.contributor.authorChen, WHen_US
dc.date.accessioned2014-12-08T15:26:09Z-
dc.date.available2014-12-08T15:26:09Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7695-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18548-
dc.description.abstractThis paper proposes novel 3-D symmetric RF passive components, including inductors, transformers, and baluns. Layout areas of these components are drastically reduced by means of stacked structure while the symmetry of input and output ports is also maintained. The area saving of 3-D inductor is up 70 %. The 1:1 transformer shows less than 0.1 % inductance mismatch in a 18 GHz range, and K is up to 0.87 at 17 GHz. The 3-D balun manifests less than 0.8 dB gain mismatch from 5.25GHz to 6GHz and phase error is about 4degrees at 5.25 GHz according to measurement results. All the components are fabricated in a 0.18 mum standard CMOS process.en_US
dc.language.isoen_USen_US
dc.titleSymmetric 3D passive components for RE ICs applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3en_US
dc.citation.spageA85en_US
dc.citation.epageA88en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184045100169-
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