Optimized noise and consistent RF model for 0.18 mu m MOSFETs

doi:10.1109/VTSA.2003.1252564

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Li, HY	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Liang, V	en_US
dc.contributor.author	Chien, SC	en_US
dc.date.accessioned	2014-12-08T15:26:10Z	-
dc.date.available	2014-12-08T15:26:10Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7765-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18560	-
dc.identifier.uri	http://dx.doi.org/10.1109/VTSA.2003.1252564	en_US
dc.description.abstract	Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 mum MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number.	en_US
dc.language.iso	en_US	en_US
dc.title	Optimized noise and consistent RF model for 0.18 mu m MOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VTSA.2003.1252564	en_US
dc.identifier.journal	2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	109	en_US
dc.citation.epage	112	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000189391000029	-
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