GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIN, WJ	en_US
dc.contributor.author	TSENG, TY	en_US
dc.contributor.author	LU, HB	en_US
dc.contributor.author	TU, SL	en_US
dc.contributor.author	YANG, SJ	en_US
dc.contributor.author	LIN, IN	en_US
dc.date.accessioned	2014-12-08T15:03:19Z	-
dc.date.available	2014-12-08T15:03:19Z	-
dc.date.issued	1995-06-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.359121	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1857	-
dc.language.iso	en_US	en_US
dc.title	GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.359121	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	77	en_US
dc.citation.issue	12	en_US
dc.citation.spage	6466	en_US
dc.citation.epage	6471	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RD57200059	-
dc.citation.woscount	44	-
顯示於類別：	期刊論文