Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiang, CC | en_US |
dc.contributor.author | Ko, IH | en_US |
dc.contributor.author | Chen, MC | en_US |
dc.contributor.author | Wu, ZC | en_US |
dc.contributor.author | Lu, YC | en_US |
dc.contributor.author | Jang, SM | en_US |
dc.contributor.author | Liang, MS | en_US |
dc.date.accessioned | 2014-12-08T15:26:16Z | - |
dc.date.available | 2014-12-08T15:26:16Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.isbn | 0-7803-7797-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18650 | - |
dc.description.abstract | This work investigates the leakage and breakdown mechanisms in the Cu damascene structure with a carbon-doped low-k PECVD organosilicate glass (OSG, k=3) as the intermetal dielectric (IMD) and an alpha-SiCN(k=5)/alpha-SiC(k=4) bilayer-structured dielectric film as the Cu-cap barrier. It is found that the leakage mechanism between Cu lines is dependent on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier in the Cu damascene structure. In the Cu damascene using an alpha-SiCN/alpha-SiC bilayer barrier of 40nm/10nm or 30nm/20nm bilayer thickness, the large leakage current (Frenkel-Poole emission) between Cu lines is attributed to the plenty of interfacial defects, such as cracks, voids, traps or dangling bonds at the alpha-SiC/OSG interface, which are generated by the larger tensile force of the thicker alpha-SiC film. On the other hand, the breakdown field and TDDB (time-dependent-dielectric-breakdown) lifetime of the Cu damascene reveal little dependence on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier, and the observed breakdown of the Cu damascene structure is presumably due to dielectric breakdown of the bulk OSG layer. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | en_US |
dc.citation.spage | 201 | en_US |
dc.citation.epage | 203 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000184465800060 | - |
Appears in Collections: | Conferences Paper |