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| A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications | 104 |
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| A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications | 104 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 98 |
| 美國 | 6 |
| 檢視 | |
|---|---|
| Shenzhen | 97 |
| Kensington | 4 |
| Beijing | 1 |
| Edmond | 1 |
| Menlo Park | 1 |