The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon

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DC 欄位	值	語言
dc.contributor.author	Lin, YD	en_US
dc.contributor.author	Wu, YCS	en_US
dc.contributor.author	Chao, CW	en_US
dc.contributor.author	Hu, GR	en_US
dc.date.accessioned	2014-12-08T15:26:17Z	-
dc.date.available	2014-12-08T15:26:17Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	1-56677-385-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18664	-
dc.description.abstract	The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon were investigated. It was found that oxygen in Ni deposited film had little effect on the growth rate of polycrystalline silicon. However, an incubation period was needed for nickel oxide to be reduced to nickel metal for the subsequent mediated crystallization process.	en_US
dc.language.iso	en_US	en_US
dc.title	The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS	en_US
dc.citation.volume	2002	en_US
dc.citation.issue	23	en_US
dc.citation.spage	140	en_US
dc.citation.epage	145	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000186760700016	-
顯示於類別：	會議論文