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dc.contributor.authorLin, YDen_US
dc.contributor.authorWu, YCSen_US
dc.contributor.authorChao, CWen_US
dc.contributor.authorHu, GRen_US
dc.date.accessioned2014-12-08T15:26:17Z-
dc.date.available2014-12-08T15:26:17Z-
dc.date.issued2003en_US
dc.identifier.isbn1-56677-385-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18664-
dc.description.abstractThe effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon were investigated. It was found that oxygen in Ni deposited film had little effect on the growth rate of polycrystalline silicon. However, an incubation period was needed for nickel oxide to be reduced to nickel metal for the subsequent mediated crystallization process.en_US
dc.language.isoen_USen_US
dc.titleThe effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous siliconen_US
dc.typeProceedings Paperen_US
dc.identifier.journalTHIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGSen_US
dc.citation.volume2002en_US
dc.citation.issue23en_US
dc.citation.spage140en_US
dc.citation.epage145en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000186760700016-
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