Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, WC	en_US
dc.contributor.author	Chen, CF	en_US
dc.contributor.author	Chang, KM	en_US
dc.date.accessioned	2014-12-08T15:26:17Z	-
dc.date.available	2014-12-08T15:26:17Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7749-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18671	-
dc.description.abstract	Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N-2/O-2 = 5/1 (slm) optimum mixed gas ambient These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS	en_US
dc.citation.spage	349	en_US
dc.citation.epage	352	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000189450800077	-
顯示於類別：	會議論文