Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, CH | en_US |
dc.contributor.author | Yu, DS | en_US |
dc.contributor.author | Chin, A | en_US |
dc.contributor.author | Wu, CH | en_US |
dc.contributor.author | Chen, WJ | en_US |
dc.contributor.author | Zhu, CX | en_US |
dc.contributor.author | Li, MF | en_US |
dc.contributor.author | Cho, BJ | en_US |
dc.contributor.author | Kwong, DL | en_US |
dc.date.accessioned | 2014-12-08T15:26:18Z | - |
dc.date.available | 2014-12-08T15:26:18Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.isbn | 0-7803-7872-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18687 | - |
dc.description.abstract | We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | en_US |
dc.citation.spage | 319 | en_US |
dc.citation.epage | 322 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000189158800073 | - |
Appears in Collections: | Conferences Paper |