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dc.contributor.authorHuang, CHen_US
dc.contributor.authorYu, DSen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorWu, CHen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorCho, BJen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:26:18Z-
dc.date.available2014-12-08T15:26:18Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7872-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18687-
dc.description.abstractWe demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.en_US
dc.language.isoen_USen_US
dc.titleFully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGESTen_US
dc.citation.spage319en_US
dc.citation.epage322en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189158800073-
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