標題: A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cell
作者: Chung, SS
Chiang, PY
Chou, G
Huang, CT
Chen, P
Chu, CH
Hsu, CCH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.
URI: http://hdl.handle.net/11536/18689
ISBN: 0-7803-7872-5
期刊: 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
起始頁: 617
結束頁: 620
Appears in Collections:Conferences Paper