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dc.contributor.authorTsui, BYen_US
dc.contributor.authorYang, CCen_US
dc.contributor.authorFang, KLen_US
dc.date.accessioned2014-12-08T15:26:21Z-
dc.date.available2014-12-08T15:26:21Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7765-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/18715-
dc.description.abstractIn this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a Serial-Parallel Hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic thermal conductivity of nano-porous silica filmen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage251en_US
dc.citation.epage254en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189391000065-
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