The blue-green luminescence and current-voltage characteristics of MOS diode made on thermally annealed Si+ implanted SiO2 substrate

Abstract

The defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) characteristics in metal-oxide-semiconductor (MOS) diode made on 500nm-thick multi-energy Si-ion-implanted, PECVD-grown SiO2 film on (100)-oriented silicon substrate (SiO2:Si+) after thermal annealing at 1100degreesC are demonstrated. The optimized annealing time is 180 min for enhanced PL at 415 nm and 455 urn, which indicates the completely activation of the Si-O related species and the neutral oxygen vacancy (NOV) correlated irradiative defects, respectively. The pulsed-current based EL of the Ag/SiO2:Si+/Si/Ag MOS diode is initiated at threshold current of 280 mA, which exhibits a saturation effect at 965 mA after a power increment by nearly four order of magnitude. This corresponds a biased voltage of 6.2 V. The far-field EL emission pattern reveals different colors red-shifting from deep blue to fully green as the biased current increases up to saturation. The current-voltage analysis shows the turn-on voltage and the breakdown field of the MOS diode is 3 V and 130 kV/cm, respectively.