Characterization and modeling of on-chip inductor substrate coupling effect

Abstract

The substrate coupling effects of two adjacent coplanar spiral inductors are characterized and modeled. The noise magnitude between two 45mum-away inductors can be reduced by 6.83 dB by using guard-ring surrounding each inductor, and improved by 10.28 dB further by adding patterned ground polysilicon shield beneath at 3 GHz. The inductor with patterned polysilicon shield beneath shows improved quality factor and noise isolation. Moreover, a macro model is presented for modeling quality factor and inductance of on-chip spiral inductor and associated neighboring inductor's coupling noise effect.