Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

doi:10.1109/LED.2011.2163181

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Li, Fu-Hai	en_US
dc.contributor.author	Fuh, Chur-Shyang	en_US
dc.contributor.author	Shieh, Han-Ping D.	en_US
dc.date.accessioned	2014-12-08T15:26:32Z	-
dc.date.available	2014-12-08T15:26:32Z	-
dc.date.issued	2011-10-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2011.2163181	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18837	-
dc.description.abstract	A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO: N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.	en_US
dc.language.iso	en_US	en_US
dc.subject	InGaZnO (IGZO)	en_US
dc.subject	in situ back-channel passivation (BCP)	en_US
dc.subject	nitrogenated InGaZnO (IGZO:N)	en_US
dc.title	Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2011.2163181	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1397	en_US
dc.citation.epage	1399	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000295340300027	-
dc.citation.woscount	5	-
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