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dc.contributor.authorLEE, WDen_US
dc.contributor.authorHORNG, Len_US
dc.contributor.authorYANG, TJen_US
dc.contributor.authorCHIOU, BSen_US
dc.date.accessioned2014-12-08T15:03:20Z-
dc.date.available2014-12-08T15:03:20Z-
dc.date.issued1995-06-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://hdl.handle.net/11536/1883-
dc.description.abstractThe experimental results on the magnetic behavior of the transport critical current density in a bent Bi based superconducting tape have shown that the irreversible strain limit epsilon(irrev) for the onset of permanent strain damage to Ag sheathed superconductors is not dependent on the magnetic field, nor does the normalized I-c(H, epsilon)/I-c(0, epsilon) current depend on the strain at least up to 0.5 T at 77 K. Such a behavior has been attributed to two reasons: (1) The intrinsic pinning properties are unchanged in a bent tape; (2) The strain effect is extrinsic and arises from superconductor cracks. Thus, based on these arguments a Josephson junction tunneling model with cracks in between the grain boundaries is proposed to explain the J(c) behavior quite well for a bent granular high-T-c superconducting tape. Our model calculation shows that the critical current density of high-T-c superconductor may be enhanced by increasing the strain tolerance epsilon(irrev) and the epsilon(irrev) is determined by the properties of Ag sheathed tape and its related material parameters, which are dependent on the connectivity of the grain boundaries.en_US
dc.language.isoen_USen_US
dc.titleANALYSIS OF TRANSPORT CRITICAL-CURRENT DENSITY IN A BENT BI-PB-SR-CA-CU-O SILVER-SHEATHED TAPEen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume247en_US
dc.citation.issue3-4en_US
dc.citation.spage215en_US
dc.citation.epage220en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1995RE85200003-
dc.citation.woscount21-
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