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dc.contributor.authorKao, HSen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:26:32Z-
dc.date.available2014-12-08T15:26:32Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7690-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/18841-
dc.description.abstractThe proposed transmitter chip is fabricated in a standard 0.25um single-poly-five-metal CMOS process with low resistance substrate. It consists of a quadrature modulator, a quadrature VCO, and a power amplifier. This transmitter IC consumes only 45 mA from a 2.5V power supply voltage. With highly linear quadrature modulator and low phase-error quadrature VCO structure, the measured LO leakage, image rejection, second-order inter-modulation and third-order inter-modulation of the modulated signal at the output of transmitter achieve -59dBc, -57dBc, -60dBc, and -56dBc, respectively. The three-stage power amplifier is also integrated to provide a 9.8dBm output power with 15% efficiency for short-range wireless communication applications.en_US
dc.language.isoen_USen_US
dc.titleAn improved low-power CM OS direct-conversion transmitter for GHZ wireless communication applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAPCCAS 2002: ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, VOL 1, PROCEEDINGSen_US
dc.citation.spage5en_US
dc.citation.epage8en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000181146000002-
Appears in Collections:Conferences Paper