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dc.contributor.authorShye, DCen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorHwang, CCen_US
dc.contributor.authorChen, JSen_US
dc.contributor.authorSu, IWen_US
dc.contributor.authorChou, CCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:26:34Z-
dc.date.available2014-12-08T15:26:34Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7414-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/18857-
dc.description.abstractThin (Ba0.5Sr0.5)TiO3 (BST) films were sputtered on Pt[FiN/Ti/Si multilayer substrates at very low temperature (150degrees C). A novel process, using wavelength 248-nm KrF excimer laser annealing (ELA), has been undertaken to implement barium strontium titanate (BST) films at a low process temperature of 300degrees C. The crystallinity and dielectric constant are greatly improved after ELA treatment. In this work, the variation of texture was investigated. Besides, the escaped oxygen atoms from BST films were detected in-situ using a residual gas analyzer (RGA) during ELA process. Thus, the degradation of upper surface is strongly influenced by the laser energy fluence for an ELA-BST film.en_US
dc.language.isoen_USen_US
dc.subjectexcimer laser annealingen_US
dc.subjectlow temperatureen_US
dc.subjecttextureen_US
dc.subjectresidual gas analyzer (RGA)en_US
dc.titleCharacteristics of low-temperature-prepared (Ba, Sr)TiO3 films post treated by novel excimer laser annealingen_US
dc.typeProceedings Paperen_US
dc.identifier.journalISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICSen_US
dc.citation.spage227en_US
dc.citation.epage230en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000183375500056-
Appears in Collections:Conferences Paper


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