標題: Bipolar Nonlinear Ni/TiO(2)/Ni Selector for 1S1R Crossbar Array Applications
作者: Huang, Jiun-Jia
Tseng, Yi-Ming
Hsu, Chung-Wei
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2011
摘要: A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO(2)/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO(2) barriers. The series connection with an HfO(2)-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
URI: http://dx.doi.org/10.1109/LED.2011.2161601
http://hdl.handle.net/11536/18861
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2161601
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 10
起始頁: 1427
結束頁: 1429
顯示於類別:期刊論文