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dc.contributor.authorFang, KLen_US
dc.contributor.authorTsui, BYen_US
dc.contributor.authorYang, CCen_US
dc.contributor.authorChen, MCen_US
dc.contributor.authorLee, SDen_US
dc.contributor.authorBeekmann, Ken_US
dc.contributor.authorTony, Wen_US
dc.contributor.authorGiles, Ken_US
dc.contributor.authorIshaq, Sen_US
dc.date.accessioned2014-12-08T15:26:35Z-
dc.date.available2014-12-08T15:26:35Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7216-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/18881-
dc.description.abstractThe electrical and material stability of a newly developed CVD ultra low-k dielectric material called Orion, is explored. It has a dielectric constant of less than 2.2 with excellent thermal stability up to 600degreesC. It shows very low leakage current of only 1nA/cM(2) at 2.5MV/cm. Although both Al and Cu ions can be driven into Orion easily, no metal ions are observed in the Orion with a TAN gate. The Orion material also shows very good adhesion with TaN and oxide hardmask. The current transport mechanism and electrical reliability were investigated. Although weak dielectric polarization occurs under bias-temperature stress, Orion is a very promising material for next generation Cu-interconnect technology.en_US
dc.language.isoen_USen_US
dc.titleElectrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnectionen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCEen_US
dc.citation.spage60en_US
dc.citation.epage62en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176641200018-
Appears in Collections:Conferences Paper