完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Lee, CS | en_US |
dc.contributor.author | Chang, EY | en_US |
dc.contributor.author | He, JJ | en_US |
dc.date.accessioned | 2014-12-08T15:26:35Z | - |
dc.date.available | 2014-12-08T15:26:35Z | - |
dc.date.issued | 2002 | en_US |
dc.identifier.isbn | 1-56677-369-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18888 | - |
dc.description.abstract | New Schottky structures (Ti/W/Cu, Ti/Co/Cu, Ti/Mo/Cu),with copper and refractory diffusion barrier metal, for GaAs Schottky diodes were evaluated. For the widely used Ti/Pt/Au Schottky diode, the thick overcoat gold layer was replaced with copper; Pi layer was replaced with the transition metals such as W, Co and Mo. The choice of the refractory metals was I based on their resistivity and the capability as the anti-diffusion barrier. The multi-layer metals were sputtered on the surface of n-GaAs. The Schottky metals were annealed at 15.0degreesC-300degreesC after deposition. Them ideality. factor and Schottky barrier height are 1.08/0.78eV, 1.07/0.71eV and 1.06/0.76eV for Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu. structure respectively after annealing at 150degreesC for 2 minutes. The electrical properties of these contacts are, comparable with the typical Ti/Pt/Au Schottky diode which has an ideality factor close to 1.07. From the XkD results, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable after annealing up to 400degreesC for 30 minutes; Ti/Mo/Cu Schottky structure is. thermally stable up to 300degreesC annealing for 30min These results show that the new. Schottky. structure's have excellent electrical characteristics compare to the traditional Ti/Pt/Au structure and can be used as the Schottky metals for GaAs devices. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Use of Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu multi-layer metals as Schottky metals for GaAs Schottky diodes | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | en_US |
dc.citation.volume | 2002 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 317 | en_US |
dc.citation.epage | 321 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000180671100037 | - |
顯示於類別: | 會議論文 |